Lattice relaxation due to hydrogen passivation in boron-doped silicon

Stutzmann, M.; Harsanyi, J.; Breitschwerdt, A.; Herrero, C. P.
May 1988
Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1667
Academic Journal
The influence of hydrogen on the lattice constant of boron-doped crystalline silicon is studied by x-ray diffraction. It is found that hydrogen passivation of the boron acceptors is accompanied by a noticeable expansion of the passivated layer. A value of +(2.5±0.5)×10-24 cm3/atom is obtained for the expansion coefficient due to B-H complexes.


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