Dependence of elastic strain on thickness for ZnSe films grown on lattice-mismatched materials

Yokogawa, Toshiya; Sato, Hisanao; Ogura, Mototsugu
May 1988
Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1678
Academic Journal
We present a new approach for calculation of the dependence of elastic strain on layer thickness concerning ZnSe films grown on GaAs and on ZnS. The basic concept involved in our model is that the interfacial misfit dislocations are generated only when the areal strain energy density exceeds an energy barrier. It is found that the elastic strain calculated by this model is quite in agreement with experimental results for the ZnSe/GaAs system with the energy barrier of 79 erg/cm2. To compare the theory with experiments, the difference of thermal expansion coefficient between the epitaxial layer and the substrate must be taken into consideration. Applications of the model to other systems are also discussed.


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