Grown-facet-dependent characteristics of silicon-on-insulator by lateral solid phase epitaxy

Kusukawa, K.; Moniwa, M.; Murakami, E.; Warabisako, T.; Miyao, M.
May 1988
Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1681
Academic Journal
Electrical characteristics of Si layers on SiO2 formed by seeded lateral solid phase epitaxy are evaluated using metal-oxide-semiconductor field-effect transistors (MOSFET’s) fabricated in the layer. To evaluate the {110} and {111} facet grown areas separately, the locations of the MOSFET’s are varied as a function of distance from the seeding region. Significant differences in electrical characteristics of the MOSFET’s are observed depending on the single-crystal growth mode. A field-effect (electron) mobility of about 700 cm2/(V s) was obtained for n-channel MOSFET’s fabricated in the {110} facet grown region. That for the {111} facet growth region was inadequate. The results indicate the possibility of applying the method for future three-dimensional device structures using a {110} facet grown region.


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