TITLE

Long minority hole diffusion length and evidence for bulk radiative recombination limited lifetime in InP/InGaAs/InP double heterostructures

AUTHOR(S)
Gallant, M.; Zemel, A.
PUB. DATE
May 1988
SOURCE
Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1686
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Minority hole diffusion length, lifetime, and mobility for undoped InGaAs were measured at 297 and 77 K in metalorganic chemical vapor deposited InP/InGaAs/InP double heterostructures using continuous-wave and pulsed optical beam induced current techniques. A hole diffusion length Lp=140 μm, a lifetime τp=18.5 μs, and a mobility μp=425 cm2/(V s) were obtained at room temperature. To the best of our knowledge, these properties are the highest reported values for InGaAs. The measured carrier lifetime and its temperature dependence are consistent with bulk radiative recombination in undoped InGaAs.
ACCESSION #
9826851

 

Related Articles

  • Electrical properties of boron-doped hydrogenated amorphous silicon and n-type GaAs heterojunction. Nagpal, Alka; Gupta, R. S.; Srivastava, G. P. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p3730 

    Presents a study which investigated the electrical properties of (p)aSi:H-(n)gallium arsenide heterojunction by measuring current-voltage and capacitance voltage characteristics. Details of the built-in potential of the heterojunction and the gap-state density in the chemical vapor deposition;...

  • Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition. Bonnefoi, A. R.; Collins, R. T.; McGill, T. C.; Burnham, R. D.; Ponce, F. A. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p285 

    We report the first observations of resonant tunneling in electronic transport perpendicular to two AlAs layers separated by a GaAs quantum well in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition. Resonant tunneling can be observed as inflections in the 1-V curves at...

  • Current confinement in a GaAs/AlGaAs heterostructure by in situ laser-patterned desorption of a current-blocking quantum well. Epler, J. E.; Treat, D. W.; Paoli, T. L. // Applied Physics Letters;5/7/1990, Vol. 56 Issue 19, p1828 

    Radiation from Ar+ and Nd:YAG lasers is used within a metalorganic chemical vapor deposition reactor to thermally desorb selected areas of GaAs quantum well (QW) layers during a pause in the epitaxial growth. The process, called laser-patterned desorption, is used to laterally pattern current...

  • Extremely high electron mobility in a GaAs-GaxIn1-xP heterostructure grown by metalorganic chemical vapor deposition. Razeghi, M.; Defour, M.; Omnes, F.; Dobers, M.; Vieren, J. P.; Guldner, Y. // Applied Physics Letters;7/31/1989, Vol. 55 Issue 5, p457 

    On studying the magnetoresistivity of GaAs-GaInP heterostructures grown by low-pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquid-helium temperatures, we have observed extremely high electron mobilities. Using the persistent photoconductivity effect, by...

  • Ultrahigh mobility two-dimensional electron gas in Al[sub x]Ga[sub 1-x]As/GaAs heterostructures.... Basco, Ricardo; Agahi, Farid // Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1960 

    Focuses on the ultrahigh mobility of two-dimensional electron gas (2DEG) in Al[sub x]Ga[sub 1-x]As/GaAs (gallium arsenide) heterostructures by organometallic vapor phase epitaxy. Effectiveness of the conventional AlGaAs technique; Characterization of the resulting 2DEG structures; Details on...

  • Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition. Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D. // Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p945 

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using metalorganic chemical vapor deposition. A wet chemical etching process was used to expose the intersecting (111)Ga and (111)Ga planes with 6 μm periodicity. Charge collection microscopy was used to...

  • Grown-in defects in multi-epilayer GaAs grown by metalorganic chemical vapor deposition under different growth conditions. Li, Sheng S.; Lee, D. H.; Choi, C. G.; Andrews, J. E. // Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1180 

    Studies of the grown-in defects in multi-epilayer GaAs (with/without a buffer layer) grown by metalorganic chemical vapor deposition under different [AsH3]/[TMGa] ratios, growth temperatures, and growth rates have been made in this letter by the deep level transient spectroscopy method. For...

  • Laser selective deposition of GaAs on Si. Bedair, S. M.; Whisnant, J. K.; Karam, N. H.; Tischler, M. A.; Katsuyama, T. // Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p174 

    GaAs films have been selectively deposited on Si substrates by laser induced chemical vapor deposition. An Ar+ laser was used to provide the required local heating on an otherwise relatively cool substrate to deposit GaAs spots and write GaAs lines. The deposition parameters were adjusted to...

  • Characterization of GaAs grown by metalorganic chemical vapor deposition on Si-on-insulator. Pearton, S. J.; Vernon, S. M.; Short, K. T.; Brown, J. M.; Abernathy, C. R.; Caruso, R.; Chu, S. N. G.; Haven, V. E.; Bunker, S. N. // Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1188 

    Epitaxial GaAs layers were grown by metalorganic chemical vapor deposition on Si-on-insulator structures formed by high dose oxygen implantation. The quality of the GaAs films was examined as a function of layer thickness (0.01–4 μm). The surface morphology, ion backscattering yield,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics