Misfit stress relaxation phenomena in GaAsP-InGaAs strained-layer superlattices

Radzimski, Z. J.; Jiang, B. L.; Rozgonyi, G. A.; Humphreys, T. P.; Hamaguchi, N.; Parker, C.; Bedair, S. M.
May 1988
Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1692
Academic Journal
Misfit stress relaxation phenomena were investigated in InGaAs-GaAsP strained-layer superlattice layers as a function of period thickness using x-ray diffraction topography and electron-beam-induced current techniques. By controlling the thickness of the individual layer, as well as the total thickness of an InGaAs/GaAsP strained-layer superlattice, we have achieved a defect density reduction in GaAs epilayers grown on GaAs substrates. Several strained-layer superlattice buffer layers whose period thickness varied from 80 to 120 nm have been studied.


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