TITLE

Lateral growth of GaAs over W by selective liquid phase epitaxy

AUTHOR(S)
Chung, Ki-Woong; Kwon, Young-Se
PUB. DATE
May 1988
SOURCE
Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1716
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The GaAs/W/GaAs structures were made by selective liquid phase epitaxy which was simply explained by the diffusion-limited growth. The growth was independent of the direction of metal stripes. Using this method, a diode was fabricated and has shown good electrical characteristics.
ACCESSION #
9826832

 

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