Experimental determination of the nanocrystalline volume fraction in silicon thin films from Raman spectroscopy

Bustarret, E.; Hachicha, M. A.; Brunel, M.
May 1988
Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1675
Academic Journal
The effect of crystallite sizes L smaller than 100 nm on the integrated Raman cross section Σc of the transverse optical (TO) mode of fcc silicon was studied experimentally in fully nanocrystallized thin films. The Σc/Σa (amorphous) ratio of this mode is shown to be 1 up to L=30 Å, and to decay exponentially down to 0.1 at larger L. A systematic procedure taking into account both this effect and the experimental optical absorption coefficient αexp at the excitation wavelength is then proposed for the determination of the crystalline volume fraction in mixed phase (amorphous/nanocrystalline) silicon systems by Raman measurements.


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