Hole photoionization cross sections of EL2 in GaAs

Silverberg, P.; Omling, P.; Samuelson, L.
May 1988
Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1689
Academic Journal
The spectral dependence of the hole photoionization cross section σ0p of EL2 in GaAs has been determined in absolute numbers at T=78 and 295 K. From simultaneous measurements of the electron photoionization cross section σ0n, accurate values of the photon energies and the cross sections at which σ0n=σ0p could be obtained. These data are of importance for rapid and accurate determination of concentration and charge states of EL2 in GaAs, e.g., in wafer mapping applications.


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