TITLE

Hole photoionization cross sections of EL2 in GaAs

AUTHOR(S)
Silverberg, P.; Omling, P.; Samuelson, L.
PUB. DATE
May 1988
SOURCE
Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1689
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The spectral dependence of the hole photoionization cross section σ0p of EL2 in GaAs has been determined in absolute numbers at T=78 and 295 K. From simultaneous measurements of the electron photoionization cross section σ0n, accurate values of the photon energies and the cross sections at which σ0n=σ0p could be obtained. These data are of importance for rapid and accurate determination of concentration and charge states of EL2 in GaAs, e.g., in wafer mapping applications.
ACCESSION #
9826795

 

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