TITLE

Thickness dependence of superconductivity in rf-sputtered Y-Ba-Cu-O thin films

AUTHOR(S)
Akoh, H.; Shinoki, F.; Takahashi, M.; Takada, S.
PUB. DATE
May 1988
SOURCE
Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1732
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Y-Ba-Cu-O thin films (100–730 nm) with small grains and a smooth surface have been fabricated by rf diode sputtering. The values of transition temperature Tc and critical current density Jc for the film (730 nm thickness) on SrTiO3 are 65 K and 1.2×105 A/cm2 at 4.2 K, respectively. The thickness dependence of Tc and Jc for the patterned films shows that Tc and Jc are almost constant for films with a thickness d≥200 nm.
ACCESSION #
9826790

 

Related Articles

  • CoSm-based high-coercivity thin films for longitudinal recording. Velu, E. M. T.; Lambeth, D. N. // Journal of Applied Physics;4/15/1991, Vol. 69 Issue 8, p5175 

    Studies a number of cobalt samarium (CoSm) thin films produced by radio frequency-diode sputtering to produce thin media with high intrinsic coercivity. Limitation of achievable linear density in longitudinal recording medium; Analysis of film composition; Magnetic properties of CoSm films...

  • Sputter deposition of YBa2Cu3O6+x on alumina and the influence of ZrO2 buffer layers. Stamper, A.; Greve, D. W.; Wong, D.; Schlesinger, T. E. // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1746 

    The deposition of films of YBa2Cu3O6+x by rf diode sputtering on alumina has been investigated. Although a stoichiometric (123) target was employed, the film composition differs from that of the target and varies as a function of position on the substrate. Films displaying a broad resistive...

  • Interface engineering in preparation of organic surface-emitting diodes. Hung, L. S.; Tang, C. W. // Applied Physics Letters;5/24/1999, Vol. 74 Issue 21, p3209 

    Discusses the preparation of a surface-emitting organic light emitting diode by sputter deposition of indium-tin-oxide on a buffered layer structure. Usefulness of a thin film of copper phthalocyanine (CuPc) in preventing sputter damage; Electron-injection barrier formed by CuPc with the Alq...

  • A 0.5-μm-thick polycrystalline silicon Schottky diode with rectification ratio of 10[sup6]. Guliants, Elena A.; Ji, Chunhai; Song, Young J.; Anderson, Wayne A. // Applied Physics Letters;2/25/2002, Vol. 80 Issue 8, p1474 

    Presents the fabrication of Schottsky diodes on 0.5 nanometer thick polysilicon films. Growth of silicon on the NiSi[sub 2] layer; Reaction during the sputtering of silicon and nickel atoms; Rectification ratio of the diodes.

  • Photoconductivity of CuInSe[sub 2] films. Rud’, V. Yu.; Rud’, Yu. V. // Semiconductors;Nov97, Vol. 31 Issue 11, p1151 

    CulnSe[sub 2] thin films were grown by vacuum sputtering of presynthesized material from a single source. The room-temperature photoconductivity spectra of the films were obtained. It was determined that the photoconductivity of these films depends strongly on the preparation conditions and,...

  • Microwave measurements of the absolute London penetration depth in double-sided YBa[sub 2]Cu[sub 3]O[sub 7-x] thin films on sapphire. Zaitsev, A. G.; Schneider, R.; Linker, G.; Ratzel, F.; Smithey, R.; Schweiss, P.; Geerk, J.; Schwab, R.; Heidinger, R. // Review of Scientific Instruments;Feb2002, Vol. 73 Issue 2, p335 

    The absolute values of the London penetration depth λ[sub L], were measured in epitaxial (001) YBa[sub 2]Cu[sub 3]O[sub 7-x] (YBCO) thin films prepared by simultaneous sputter deposition on both sides of 3 in. r-cut sapphire wafers buffered with thin (001) CeO[sub 2] layers. The measurements...

  • Microstructure and roughness improvement of polycrystalline Bi thin films upon pulsed-laser melting. Missana, T.; Afonso, C. N. // Applied Physics A: Materials Science & Processing;1996, Vol. 62 Issue 6, p513 

    Bismuth films with different thicknesses have been grown by dc sputtering on substrates held at room temperature. The films are always formed by columnar crystals with a grain size comparable to the film thickness which lead to surface roughness. It increases with the thickness of the films and...

  • Growth and Characterization of NdBa[sub 2]Cu[sub 3]O[sub 7-x] Thin Films Deposited by d.c. Sputtering. Cucolo, M. C.; Cucolo, A. M. // International Journal of Modern Physics B: Condensed Matter Phys;10/30/2000, Vol. 14 Issue 25/27, p2664 

    Among the ReBa[sub 2]Cu[sub 3]O[sub 7-x] (ReBCO, Re= rare earth) cuprate family the NdBa[sub 2]Cu[sub 3]O[sub 7-x] system (NdBCO) is known to have the highest critical temperature and critical current. Moreover, in comparison with the YBa[sub 2]Cu[sub 3]O[sub 7-x] compound, NdBCO shows a better...

  • Surface and Structural Characterization of CuInS[sub 2] Thin Films Deposited by One-Stage RF Reactive Sputtering. He, Yunbin; Österreicher, I.; Krämer, T.; Polity, A.; Kriegseis, W.; Meyer, B. K.; Hardt, M. // International Journal of Modern Physics B: Condensed Matter Phys;11/20/2002, Vol. 16 Issue 28/29, p4380 

    CuInS[sub 2] films were deposited on float glass substrates by a one-stage reactive RF sputter process using a Cu-In alloy target and H[sub 2]S gas. The sputtered films generally have a (112) preferential orientation. X-ray reflectometry was used to measure the thickness, surface density as well...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics