Sputter deposition of YBa2Cu3O6+x on alumina and the influence of ZrO2 buffer layers

Stamper, A.; Greve, D. W.; Wong, D.; Schlesinger, T. E.
May 1988
Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1746
Academic Journal
The deposition of films of YBa2Cu3O6+x by rf diode sputtering on alumina has been investigated. Although a stoichiometric (123) target was employed, the film composition differs from that of the target and varies as a function of position on the substrate. Films displaying a broad resistive transition have been produced in a reproducible manner. It is demonstrated that the use of a ZrO2 buffer layer decreases the transition width significantly and consistently yields films which have a more metallic-like behavior above Tc.


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