Quantum interference effects in GaAs/GaAlAs bulk potential barriers

Hayes, J. R.; England, P.; Harbison, J. P.
May 1988
Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1578
Academic Journal
We have observed a large number of oscillations (10) in the current/voltage characteristic of GaAs/GaAlAs triangular potential barriers due to quantum interference effects. When an exact number of periods of a standing wave is present in the barrier there is a minimum in the transmission coefficient for electrons. As the bias is changed the electron wavelength is changed and there will once again be a minimum when the next complete period of the standing wave is incorporated. The observation of this quantum interference effect enables us to conclude that the scattering rate for hot electrons, high in the energy band of GaAs, is much less than previously assumed.


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