Demonstration of an InAsSb strained-layer superlattice photodiode

Kurtz, S. R.; Dawson, L. R.; Zipperian, T. E.; Lee, S. R.
May 1988
Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1581
Academic Journal
A photodiode consisting of a p-n junction embedded in an InAs0.09Sb0.91/InSb strained-layer superlattice with equal 130-Å-thick layers was grown using molecular beam epitaxy. This nonoptimized device exhibited photoresponse out to a wavelength of 8.7 μm at 77 K. The resistance and the minority-carrier diffusion length of the photodiode result in a detectivity (3×109 cm Hz1/2/W) at 7 μm that is within one order of magnitude of the detectivity of the best HgCdTe detectors at that wavelength.


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