TITLE

Electron beam electroreflectance studies of GaAs and CdTe surfaces

AUTHOR(S)
Raccah, P. M.; Garland, J. W.; Buttrill, S. E.; Francke, L.; Jackson, J.
PUB. DATE
May 1988
SOURCE
Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1584
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An electron beam electroreflectance (EBER) system has been built and used to investigate GaAs and CdTe sample surfaces. EBER permits one to go to low temperatures, to couple electroreflectance with high-vacuum techniques and to study the effects of different surface treatments. Analysis shows that the EBER technique leads to only negligible thermal modulation of the sample for low-energy electron beams such as that used here. The results of our measurements before and after sputtering with 2 keV O+2 ions clearly show that the measurements are very sensitive to the condition of sample surfaces. Analysis of the results shows the existence of distinct surface and bulk signals and gives detailed information about the surface before and after sputtering. Comparison of our EBER results with room-temperature electrolyte-electroreflectance results on both GaAs and CdTe confirms the analysis and establishes that electroreflectance is a surface-sensitive technique.
ACCESSION #
9826767

 

Related Articles

  • Reflectance-difference spectroscopy study of surface reactions in atomic layer epitaxy of GaAs... Maa, B.Y.; Dapkus, P.D. // Applied Physics Letters;5/20/1991, Vol. 58 Issue 20, p2261 

    Presents a real-time reflectance-difference spectroscopy (RDS) study of surface reactions of trimethylgallium (TMGa) and tertiarybutylarsine with gallium arsenide (GaAs) surfaces in an ultra-high vacuum environment. Phases of atomic layer epitaxy of GaAs; Behavior observed in RDS during TMGa...

  • Growth of (111) CdTe on tilted (001) GaAs. Cibert, J.; Gobil, Y.; Saminadayar, K.; Tatarenko, S.; Chami, A.; Feuillet, G.; Dang, Le Si; Ligeon, E. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p828 

    Twin-free growth of (111) CdTe on (001) GaAs is reported for substrates tilted around the [110] axis, i.e., exposing Ga dangling bonds at the terrace edges. Layers grown on nominally (001) substrates and tilted substrates are characterized by double crystal x-ray diffraction, low-temperature...

  • Photochemistry of dimethylcadmium on compound semiconductor surfaces. Lasky, P.J.; Lu, P.H.; Khan, K.A.; Slater, D.A.; Osgood Jr., R.M. // Journal of Chemical Physics;4/22/1997, Vol. 106 Issue 16, p6552 

    Presents dynamical studies of the surface photochemistry of dimethylcadmium (DMcd) adsorbed on GaAs(110) and CdTe(110) surfaces. Thermal chemistry of DMCd on CdTe(110) and GaAs(110); Photochemistry of DMCd on CdTe(110) and GaAs(110).

  • Electron-beam-induced current and photoetching investigations of dislocations and impurity atmospheres in n-type liquid-encapsulated Czochralski GaAs. Frigeri, C.; Weyher, J. L. // Journal of Applied Physics;6/15/1989, Vol. 65 Issue 12, p4646 

    Presents a study which focused on electron-beam-induced current and photoetching investigations or dislocations and impurity atmospheres in n-type liquid-encapsulated Czochralski gallium arsenide. Methodology; General features of the defects; Conclusions.

  • Growth control of GaAs epilayers with specular surface free of pyramids and twins on... Chen, P.; Rajkumar, K.C. // Applied Physics Letters;4/22/1991, Vol. 58 Issue 16, p1771 

    Studies the growth control of gallium arsenide epilayers with a specular surface. Regimes of growth conditions in terms of the static surface phase diagram; Temporal reflection high-energy electron diffraction intensity behavior during growth.

  • Influence of chemical character on GaAs(111) surface reconstruction. Ping, Jiang Guo; Ruda, Harry E. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p5332 

    Presents a study which investigated the surface reconstruction mechanism for GaAs(111)A and B surfaces. Background on the sample materials; Computational approach; Results and discussion.

  • Elastic strains in CdTe-GaAs heterostructures grown by metalorganic chemical vapor deposition. Olego, D. J.; Petruzzello, J.; Ghandhi, S. K.; Taskar, N. R.; Bhat, I. B. // Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p127 

    The elastic response associated with the lattice mismatch in (100)CdTe||(100)GaAs heterostructures was investigated by performing photoluminescence measurements as a function of CdTe layer thicknesses. The heterostructures were grown by metalorganic chemical vapor deposition. Estimates of...

  • Band gap energy and exciton peak of cubic CdS/GaAs epilayers. Yu, Young-Moon; Kim, Kwan-mo; O, Byungsung; Lee, Ki-Seon; Choi, Yong Dae; Yu, Pyeong Yeol // Journal of Applied Physics;7/15/2002, Vol. 92 Issue 2, p1162 

    Cubic zinc blende CdS epilayers were grown on (100) GaAs substrates by hot-wall epitaxy. The lattice constant of cubic CdS was measured by x-ray diffraction and it was found that the compressive strain remained in the CdS films. Photoluminescence (PL) measurement showed the free exciton emission...

  • Low-temperature photoluminescence from CdTe grown by hot-wall epitaxy on GaAs. Lischka, K.; Schmidt, T.; Pesek, A.; Sitter, H. // Applied Physics Letters;9/18/1989, Vol. 55 Issue 12, p1220 

    The low-temperature near-band-edge photoluminescence of thick (d≊36 μm) (100)CdTe epilayers grown on (100)GaAs substrates is investigated. Besides a dominating bound exciton emission, evidence for free-exciton emission (n=1 and 2) and two electron transitions (TETs) of donor-bound...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics