Reduced carbon acceptor incorporation in GaAs grown by molecular beam epitaxy using dimer arsenic

Garcia, J. C.; Beye, A. C.; Contour, J. P.; Neu, G.; Massies, J.; Barski, A.
May 1988
Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1596
Academic Journal
Doubly doped (C,Be) GaAs layers grown by molecular beam epitaxy under dimer or tetramer arsenic flux are studied by selectively excited photoluminescence. Acceptor spectroscopy gives the first experimental evidence of the decrease of carbon shallow acceptor concentration when using dimer rather than tetramer arsenic.


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