TITLE

Tight-binding study of the strained monolayer superlattices (Si)1/(Si1-xGex)1 (100)

AUTHOR(S)
Shen, Dingli; Lu, Fen; Zhang, Kaiming; Xie, Xide
PUB. DATE
May 1988
SOURCE
Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1599
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electronic structures of strained monolayer superlattices (Si)1/(Si1-xGex)1 are calculated within the tight-binding scheme by taking into consideration the effect of stress on atomic interactions. Gap variations with composition and band offsets for different strain conditions are obtained. When Si(Ge) is grown on cubic Ge(Si) with stress to match the lattice constant of the substrates, the calculated nonmonotonic behavior of the superlattice Eg(x) curve can be attributed to a similar phenomenon of the bulk alloy under the same strain. The energy band of the monolayer Si/Ge shows the zinc blende symmetry with a Si-like feature. Starting with the virtual crystal approximation for the calculation of gap and density of states, it is found that further modification using coherent potential approximation is not very significant.
ACCESSION #
9826758

 

Related Articles

  • Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering. Kowarik, S.; Weber, C.; Hinderhofer, A.; Gerlach, A.; Schreiber, F.; Wang, C.; Hexemer, A.; Leone, S. R. // AIP Advances;2015, Vol. 5 Issue 11, p1 

    Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs) of the organic semiconductors pentacene (PEN) and perfluoro-pentacene (PFP). Superlattice reflections in X-ray reflectivity and their energy dependence in resonant...

  • Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys. Krestnikov, I. L.; Heitz, R.; Ledentsov, N. N.; Hoffmann, A.; Mintairov, A. M.; Kosel, T. H.; Merz, J. L.; Soshnikov, I. P.; Ustinov, V. M. // Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3728 

    We have studied the optical properties of pseudo-alloy monolayer InAs/GaAsN superlattices with highly planar interfaces. In spite of the two-dimensional growth mode, we found that the photoluminescence (PL) reveals strong exciton localization through the whole PL band, dominating the spectrum up...

  • Superlattice structure at the surface of a monolayer of octadecanethiol self-assembled on Au(111). Camillone, Nicholas; Chidsey, Christopher E. D.; Liu, Gang-yu; Scoles, Giacinto // Journal of Chemical Physics;2/15/1993, Vol. 98 Issue 4, p3503 

    We report direct evidence of a unit mesh containing more than one hydrocarbon chain at the surface of a self-assembled monolayer of long-chain n-alkanethiols. Our helium diffraction measurements for a monolayer of n-octadecanethiol on Au(111) are consistent with a rectangular primitive unit mesh...

  • Free-standing nanoparticle superlattice sheets controlled by DNA. Wenlong Cheng; Campolongo, Michael J.; Cha, Judy J.; Tan, Shawn J.; Umbach, Christopher C.; Muller, David A.; Dan Luo // Nature Materials;Jun2009, Vol. 8 Issue 6, p519 

    Free-standing nanoparticle superlattices (suspended highly ordered nanoparticle arrays) are ideal for designing metamaterials and nanodevices free of substrate-induced electromagnetic interference. Here, we report on the first DNA-based route towards monolayered free-standing nanoparticle...

  • Photoconducting and photodielectric properties of heterostructures based on poly-n-epoxypropylcarbazole and poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] doped with zinc octabutylphthalocyanine. Davidenko, N.; Dekhtyarenko, S.; Lobach, A.; Mokrinskaya, E.; Spitsyna, N.; Studzinskii, S.; Tonkopieva, L.; Chuprina, N. // Theoretical & Experimental Chemistry;Mar2010, Vol. 46 Issue 2, p89 

    We have studied the photoconducting and photodielectric properties of heterostructures based on poly-N-epoxypropylcarbazole and poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] doped with zinc 2,3,9,10,16,17,23,24-octabutylphthalocyanine located between SnO2 :In2O3 and Ag...

  • Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect. Hong-xia Zhong; Jun-jie Shi; Min Zhang; Xin-he Jiang; Pu Huang; Yi-min Ding // Scientific Reports;10/24/2014, p1 

    Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in...

  • Monolayer thickness fluctuations in infrared photoluminescence for [211]-oriented HgTe-CdTe.... Meyer, J.R.; Reisinger, A.R.; Harris, K.A.; Yanka, R.W.; Mohnkern, L.M. // Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p545 

    Examines the monolayer thickness fluctuations in infrared photoluminescence for [211]-oriented HgTe-CdTe superlattices. High growth quality indications of double and triple peaks; Use of a band-to-band model; Calculation of energy gaps using an eight-band transfer-matrix algorithm.

  • Growth and characterization of Ge/Si strained-layer superlattices. Chang, S. J.; Huang, C. F.; Kallel, M. A.; Wang, K. L.; Bowman, R. C.; Adams, P. M. // Applied Physics Letters;11/7/1988, Vol. 53 Issue 19, p1835 

    Ultrathin Ge/Si strained-layer superlattices (SLS’s) with periodicities of a few monolayers have been successfully grown and characterized by Raman scattering spectroscopy. Structures with alternating Ge and Si layers were grown on Si substrates of different orientations. A thick 200 nm...

  • Uniform large-area growth of nanotemplated high-quality monolayer MoS2. Young, Justin R.; Chilcote, Michael; Barone, Matthew; Jinsong Xu; Katoch, Jyoti; Yunqiu Kelly Luo; Mueller, Sara; Asel, Thaddeus J.; Fullerton-Shirey, Susan K.; Kawakami, Roland; Gupta, Jay A.; Brillson, Leonard J.; Johnston-Halperin, Ezekiel // Applied Physics Letters;6/26/2017, Vol. 110 Issue 26, p1 

    Over the past decade, it has become apparent that the extreme sensitivity of 2D crystals to surface interactions presents a unique opportunity to tune material properties through surface functionalization and the mechanical assembly of 2D heterostructures. However, this opportunity carries with...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics