TITLE

In situ observations of misfit dislocation propagation in GexSi1-x/Si(100) heterostructures

AUTHOR(S)
Hull, R.; Bean, J. C.; Werder, D. J.; Leibenguth, R. E.
PUB. DATE
May 1988
SOURCE
Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1605
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We describe in situ electron microscrope observations of the motion of misfit dislocations in Ge0.3Si0.7/Si(100) heterostructures. A 350 Å Ge0.3Si0.7/Si(100) structure is grown by molecular beam epitaxy at 550 °C. Although this is below the critical thickness for this composition and growth temperature, we observe misfit dislocation nucleation and propagation as a function of in situ annealing temperature in the electron microscope. This confirms the metastable nature of GeSi strained-layer growth. The misfit dislocation density increases continuously with temperature, passing through an accelerated transition at ∼850 °C. We also report preliminary measurements of misfit dislocation velocity, which establish the identical relationship between threading and misfit dislocations in this system.
ACCESSION #
9826756

 

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