TITLE

Bipolar tunneling field-effect transistor: A three-terminal negative differential resistance device for high-speed applications

AUTHOR(S)
Leburton, J. P.; Kolodzey, J.; Briggs, S.
PUB. DATE
May 1988
SOURCE
Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1608
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Carrier injection across a tunnel homojunction is suggested as a new mechanism for a high-speed three-terminal device. The novel feature is the two-dimensional homojunction tunneling within a bipolar modulation doping structure. Negative differential resistance characterized by large peak-to-valley current ratios and high transconductance is anticipated. Estimates of the relevant time constants of the tunnel structure suggest the possibility of very high frequency operation.
ACCESSION #
9826753

 

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