TITLE

Control of epitaxial orientation of Si on CoSi2(111)

AUTHOR(S)
Tung, R. T.; Batstone, J. L.
PUB. DATE
May 1988
SOURCE
Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1611
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Template techniques for Si epitaxy are designed based on the two structures, CoSi2-C and CoSi2-S, of the CoSi2 surface. The different stacking sequences of the two CoSi2 surfaces have led to the growth of single-crystal epitaxial Si layers with either type A or type B orientation on CoSi2(111). The crystalline quality of these Si/CoSi2/Si structures far exceeds that of those reported previously. The orientation of the epitaxial Si overlayer is also found to depend on the strain in the epitaxial CoSi2 thin films.
ACCESSION #
9826751

 

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