Self-aligned diffusion barrier by nitridation of TiSi2

Wittmer, Marc
May 1988
Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1573
Academic Journal
Nitridation of TiSi2 has been shown to provide a self-aligned diffusion barrier layer on top of the silicide. A detailed analysis of the nitridation mechanism shows that the compound formed is TiN as commonly expected. The reaction TiSi2→TiN starts at the surface and progresses through the silicide film with a laterally uniform interface. The Si atoms that are dissociated from the TiSi2 grow epitaxially onto the Si substrate material. Implications for contact applications are mentioned.


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