Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs

Lum, R. M.; Klingert, J. K.; Wynn, A. S.; Lamont, M. G.
May 1988
Applied Physics Letters;5/2/1988, Vol. 52 Issue 18, p1475
Academic Journal
GaAs growth experiments have been performed with triethylarsenic (TEAs) to investigate its potential as a replacement for arsine, and to compare the effects on film properties of substituting ethyl for methyl groups in alkyl arsenic sources used in metalorganic chemical vapor deposition. Films were deposited over a wide range of growth conditions (Tg=550–750 °C, V/III=2–13), and data were obtained on film electrical and optical properties and variations in growth rate. Growth with TEAs yielded films with good surface morphology, low background doping levels (<1015 cm-3) and 77 K mobilities of 13 000 cm2/V s. Although this represents a considerable improvement over films grown with trimethylarsenic, film properties still appear to be limited by unacceptably high levels of carbon incorporation. Experiments using triethylgallium as the group III source in place of trimethylgallium resulted in substantially reduced and nonuniform growth due to prereaction at the reactor walls.


Related Articles

  • Plasma-enhanced metalorganic chemical vapor deposition of GaAs. Huelsman, A. D.; Reif, R.; Fonstad, C. G. // Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p206 

    High quality specular epilayers of GaAs were grown using a plasma enhanced metalorganic chemical vapor deposition process. The GaAs epilayers were grown from trimethyl gallium and arsine at very low pressures (2–3 Torr) using an rf discharge to dissociate arsine. Specular single-crystal...

  • Ultraviolet laser-assisted metalorganic chemical vapor deposition of GaAs. York, P. K.; Eden, J. G.; Coleman, J. J.; Fernández, G. E.; Beernink, K. J. // Journal of Applied Physics;11/15/1989, Vol. 66 Issue 10, p5001 

    Focuses on a study which investigated the growth of gallium arsenide irradiated with ultraviolet laser light in a metalorganic chemical vapor deposition reactor. Information on laser photochemical vapor deposition; Methodology of the study; Results and discussion.

  • Growth and Characterization of GaAs by Metalorganic Chemical Vapor Deposition Using Triethylgallium and Solid Arsenic. Esparza, A.; Galván, M.; Castillo, R.; Sánchez, M.; Sierra, R. Peña; Escobosa, A. // Modern Physics Letters B;8/20/2001, Vol. 15 Issue 17/18/19, p733 

    GaAs-low compensated layers were grown by using an atmospheric MOCVD system. Solid arsenic and triethylgallium (TEG) were used as precursors. The layers exhibit an electron mobility greater than 30,000 cm²/V-sec at 77K for best growing conditions. This is the highest value reported until now...

  • Identification of residual donors in high-purity undoped p-type epitaxial GaAs by magnetophotoluminescence. Bose, S. S.; Kim, M. H.; Stillman, G. E. // Applied Physics Letters;9/12/1988, Vol. 53 Issue 11, p980 

    The residual donor species, Si, S, and Ge, have been identified in high-purity undoped p-type epitaxial GaAs grown by metalorganic chemical vapor deposition and arsenic trichloride vapor phase techniques using the magnetic splittings of "two-electron" replicas of donor bound exciton transitions...

  • Defect reduction effects in GaAs on Si substrates by thermal annealing. Yamaguchi, Masafumi; Yamamoto, Akio; Tachikawa, Masami; Itoh, Yoshio; Sugo, Mitsuru // Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2293 

    High quality GaAs films with dislocation densities of 2–3×106 cm-2 on (100) Si substrates have been obtained by thermal cycle growth using the metalorganic chemical vapor deposition method. Significant reduction effects of dislocation density in the GaAs layers on Si have been...

  • Characterization of epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition. Soga, Tetsuo; Hattori, Shuzo; Sakai, Shiro; Takeyasu, Masanari; Umeno, Masayoshi // Journal of Applied Physics;5/15/1985, Vol. 57 Issue 10, p4578 

    Examines the characteristics of epitaxially grown gallium arsenide on silicon substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition. Details on the experiment; Results of the study; Conclusions.

  • Current–voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor deposition. Hase, I.; Kawai, H.; Kaneko, K.; Watanabe, N. // Journal of Applied Physics;6/1/1986, Vol. 59 Issue 11, p3792 

    Examines the current-voltage characteristics of gallium arsenide/aluminum[subx] gallium[sub1-x] arsenic/gallium heterobarriers grown by metalorganic chemical vapor deposition. Calculation of the current; Description of the tunneling effective mass; Mechanism which plays an important role in...

  • Transport measurements and donor spectra of very high purity GaAs grown using tertiarybutylarsine and triethylgallium. Watkins, S. P.; Brake, Darlene M.; Haacke, G. // Journal of Applied Physics;3/15/1994, Vol. 75 Issue 6, p2952 

    Deals with a study which analyzed gallium arsenide epilayers grown by low pressure metalorganic chemical vapor deposition using triethylgallium and tertiarybutylarsine or arsine. Experimental procedures; Growth conditions and electrical properties of gallium arsenide; Photoconductivity effect...

  • The fabrication of quantum wire structures through application of CCl[sub 4] towards lateral.... Yong Kim; Yang Keun Park // Applied Physics Letters;9/25/1995, Vol. 67 Issue 13, p1871 

    Investigates the increase of GaAs lateral growth rate in the presence of CCl[sub 4] during metalorganic chemical vapor deposition on patterned GaAs substrates. Method of fabricating quantum wire structures; Effect of lateral growth rate on the CCl[sub 4] flow rate; Study of the growth behavior...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics