Very shallow acceptors in neutron transmutation doped silicon

LaBrec, C. R.; Udo, M. K.; Ramdas, A. K.
May 1988
Applied Physics Letters;5/2/1988, Vol. 52 Issue 18, p1505
Academic Journal
We report the far-infrared absorption spectra of very shallow acceptor centers in silicon consisting of boron (aluminum) introduced during growth complexed with defect centers produced during neutron transmutation doping followed by a partial high-temperature anneal. As annealing of the samples removes radiation damage and activates isolated boron (aluminum) centers, a new acceptor series, attributed to this acceptor complex, is observed with a ground-state binding energy significantly lower than that of the known impurity.


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