Rapid thermal anneal of sprayed Y1Ba2Cu3O7-x slurry

Cody, N. W.; Sudarsan, U.; Solanki, R.
May 1988
Applied Physics Letters;5/2/1988, Vol. 52 Issue 18, p1531
Academic Journal
Thick (∼ 20 μm) superconducting films of Y1 Ba2 Cu3 O7-x have been produced on 3 in. wafers of silicon, SiO2 -coated silicon, and sapphire. The process involves spraying of a slurry of finely ground powder of Y1 Ba2 Cu3 O7-x and methyl alcohol, followed by rapid thermal anneal for sintering. The Tc for Si, SiO2 , and sapphire are 70, 81, and 62 K, respectively. Post-sinter anneal in oxygen at 400 °C further increases Tc . The adhesion of the films sintered above 980 °C is excellent.


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