Phthalocyanine photoelectrochemical cell prepared by a micelle disruption method

Harima, Yutaka; Yamashita, Kazuo; Saji, Tetsuo
May 1988
Applied Physics Letters;5/2/1988, Vol. 52 Issue 18, p1542
Academic Journal
Photoelectrochemical characteristics of a metal-free phthalocyanine electrode prepared by a micelle disruption method are described. The novel technique is found to provide more photoactive phthalocyanine layers on indium tin oxide (ITO), compared with a vacuum sublimation technique. A short-circuit photocurrent of 0.1 mA cm-2 is obtained for the ITO/H2 Pc(MD)/I-3 -I-/Pt cell under the white light illumination of 6 mW cm-2, together with an open-circuit photovoltage of 70 mV and a fill factor of 0.42. These data lead to a value of 0.06% for the energy conversion efficiency.


Related Articles

  • Evaluation of photoanodic output on carbon cluster/phthalocyanine films with respect to the types of n-type conductors employed. Abe, Toshiyuki; Nakamura, Kazuki; Ichinohe, Hiromasa; Nagai, Keiji // Journal of Materials Science;Jan2012, Vol. 47 Issue 2, p1071 

    Organic p/n bilayers, composed of carbon cluster (i.e., C or C, n-type semiconductor) and zinc phthalocyanine (denoted as ZnPc, p-type semiconductor) were prepared and used as photoelectrodes in the water phase. The bilayer (i.e., C/ZnPc or C/ZnPc) coated on a base electrode showed photoanodic...

  • The influence of rutile particles on photo-induced activity of the sol-gel TiO/ITO photo-anode. Morozova, Magdalena; Dytrych, Pavel; Spacilova, Lucie; Solcova, Olga // Research on Chemical Intermediates;Dec2015, Vol. 41 Issue 12, p9307 

    The rutile effect on structural and photo-electrochemical properties and photo-induced activity were studied. Thin TiO layers were prepared by the sol-gel method using a reverse micelles system as a molecular template and deposited on the conductive ITO substrate by a dip-coating technique. Pure...

  • Polychlorinated biphenyes in the phthalocyanine pigments Taue, S.; Chikazawa, K.; Uyeta, M. // Bulletin of Environmental Contamination & Toxicology;Oct1976, Vol. 16 Issue 4, p417 

    No abstract available.

  • n-GaAs BAND-EDGE REPOSITIONING BY MODIFICATION WITH METALLOPORPHYRIN/POLYSILOXANE MATRICES. Hilal, Hikmat S.; Masoud, Moayyad; Shakhshir, Samar; Jisrawi, Najeh // Active & Passive Electronic Components;Jan2003, Vol. 26 Issue 1, p11 

    Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of Mn III and Mn II mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n-GaAs wafers. The n-GaAs/polymer/MnP system was annealed under nitrogen and used for photoelectrochemical study in...

  • Enhanced photoelectrochemical efficiency of titania photoanodes.  // Industrial Ceramics;Apr2009, Vol. 29 Issue 1, p61 

    The article reports on the significance of using photoelectrochemical electrolysis as a direct method for solar-to-hydrogen conversion.

  • Electron transmission through layers of H2O and Xe in the ultrahigh vacuum photoreduction of CH3Cl on Ni(111). Gilton, Terry L.; Dehnbostel, Claus P.; Cowin, James P. // Journal of Chemical Physics;8/1/1989, Vol. 91 Issue 3, p1937 

    The photoreduction of CH3Cl was used to detect the transmission of electrons through layers of H2O and Xe on Ni(111) under ultrahigh vacuum (UHV) conditions. At a laser wavelength of 248 nm with H2O spacers, the electron intensity exhibited a nearly exponential decay to zero signal with the 1/e...

  • In Situ Photoluminescence Studies of Silicon Surfaces During Photoelectrochemical Etching Processes. Liu, Feng-Ming; Ren, Bin; Yan, Jia-Wei; Mao, Bing-Wei; Tian, Zhong-Qun // Surface Review & Letters;Jun-Aug2001, Vol. 8 Issue 3/4, p327 

    The photoluminescence (PL) from silicon surfaces during photoelectrochemical etching processes was monitored in situ by using a confocal microprobe spectrometer. The etching time, laser power, polarization potential and the resistance of silicon were found to remarkably influence the formation...

  • Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures. Stonas, A. R.; Stonas, A.R.; Kozodoy, P.; Marchand, H.; Fini, P.; DenBaars, S. P.; DenBaars, S.P.; Mishra, U. K.; Mishra, U.K.; Hu, E. L.; Hu, E.L. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    A photoelectrochemical (PEC) wet-etching technique (backside-illuminated PEC) is described that utilizes the dopant or band-gap selectivity of PEC etching to fabricate deeply undercut structures. Lateral etch rates exceeding 5 μm/min have been observed, producing cantilevers in excess of...

  • High efficiency n-Cd(Se,Te)/S=photoelectrochemical cell resulting from solution chemistry control. Licht, Stuart; Tenne, Reshef; Dagan, Geulah; Hodes, Gary; Manassen, Joost; Cahen, David; Triboulet, Robert; Rioux, Jacques; Levy-Clement, Claude // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p608 

    High efficiency (12.7%) CdSe0.68Te0.32/cesium polysulfide photoelectrochemical cells are demonstrated in this work. Crystals of the ternary alloy Cd(Se, Te) of type n type were synthesized by the traveling heater method. The nature of the polysulfide electrolyte, based on Cs polysulfide without...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics