High-performance InGaAsP/InP buried-heterostructure lasers and arrays defined by ion-beam-assisted etching

Yap, D.; Liau, Z. L.; Tsang, D. Z.; Walpole, J. N.
May 1988
Applied Physics Letters;5/2/1988, Vol. 52 Issue 18, p1464
Academic Journal
Ion-beam-assisted etching has been used to fabricate mass-transported InGaAsP/InP buried- heterostructure lasers. These lasers have a novel, deeply etched rectangular mesa that results in reduced current leakage. Both single-stripe lasers and Y-junction-coupled multiple-stripe laser arrays have been demonstrated. The single-stripe lasers have 12 mA cw threshold currents, differential quantum efficiencies of 32%–34% per facet, and smooth single-lobe far-field patterns. The multiple-stripe arrays lase in-phase with strong phase coherence.


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