Spatial localization of impurities in δ-doped GaAs

Schubert, E. F.; Stark, J. B.; Ullrich, B.; Cunningham, J. E.
May 1988
Applied Physics Letters;5/2/1988, Vol. 52 Issue 18, p1508
Academic Journal
Capacitance-voltage profiles on δ-doped GaAs grown by molecular beam epitaxy reveal extremely narrow widths of ≲40 Å at room temperature. Subband structure and capacitance-voltage (C-V) profiles of δ-doped GaAs are calculated self-consistently. Experimental C-V profiles agree with self-consistent results, only if we assume that Si impurities are localized on the length scale of the lattice constant in the host GaAs zinc-blende lattice.


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