TITLE

Zn-diffusion-induced intermixing of InGaAs/InP multiple quantum well structures

AUTHOR(S)
Nakashima, Kiichi; Kawaguchi, Yoshihiro; Kawamura, Yuichi; Imamura, Yoshihiro; Asahi, Hajime
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1383
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The intermixing process of InGaAs/InP multiple quantum well structures by Zn diffusion at 550 °C is investigated. Secondary ion mass spectroscopy and x-ray analysis reveal that Zn diffusion induces the intermixing of group III atoms, but has little effect on group V profiles. However, resulting group III atom profiles are not completely uniform even after Zn diffusion. These results suggest that large lattice mismatch suppresses the intermixing process by Zn diffusion.
ACCESSION #
9826634

 

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