TITLE

High-speed GaAs p-i-n photodiodes grown on Si substrates by molecular beam epitaxy

AUTHOR(S)
Paslaski, J.; Chen, H. Z.; Morkoç, H.; Yariv, A.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1410
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present results on high-speed GaAs p-i-n photodiodes grown on Si substrates by molecular beam epitaxy. In addition to the dc operating characteristics, we also report the first impulse response and microwave frequency response measurements of GaAs-on-Si photodiodes. Results include an impulse response pulse width of 45 ps and a modulation corner frequency >4 GHz at a reverse bias of -3 V.
ACCESSION #
9826617

 

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