TITLE

Disordering of InGaAs-InP quantum wells by Si implantation

AUTHOR(S)
Tell, B.; Johnson, B. C.; Zyskind, J. L.; Brown, J. M.; Sulhoff, J. W.; Brown-Goebeler, K. F.; Miller, B. I.; Koren, U.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1428
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Selective disordering of In0.53Ga0.47As-InP multiple quantum well structures by ion implantation is demonstrated for the first time. As grown, annealed, and Si implanted and annealed samples were studied by transmission electron microscopy, optical absorption, and photoluminescence. A shift of the photoluminescence and absorption edge to higher energy was observed in implanted and annealed samples with respect to annealed only samples. This shift is attributed to a combination of disordering and Burstein–Moss effect.
ACCESSION #
9826604

 

Related Articles

  • Zn-diffusion-induced intermixing of InGaAs/InP multiple quantum well structures. Nakashima, Kiichi; Kawaguchi, Yoshihiro; Kawamura, Yuichi; Imamura, Yoshihiro; Asahi, Hajime // Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1383 

    The intermixing process of InGaAs/InP multiple quantum well structures by Zn diffusion at 550 °C is investigated. Secondary ion mass spectroscopy and x-ray analysis reveal that Zn diffusion induces the intermixing of group III atoms, but has little effect on group V profiles. However,...

  • Focused ion beam channeling effects and ultimate sizes of GaAlAs/GaAs nanostructures. Laruelle, F.; Bagchi, A.; Tsuchiya, M.; Merz, J.; Petroff, P. M. // Applied Physics Letters;4/16/1990, Vol. 56 Issue 16, p1561 

    We show that focused ion beam implantation of Ga into GaAlAs/GaAs quantum wells occurs much deeper than expected from theory of implantation into amorphous GaAs and that the lateral straggling is one order of magnitude smaller than predicted by the same theories. We show that channeling is the...

  • Athermal annealing of Si-implanted GaAs and InP. Rao, Mulpuri V.; Brookshire, J.; Mitra, S.; Qadri, Syed B.; Fischer, R.; Grun, J.; Papanicolaou, N.; Yousuf, M.; Ridgway, M. C. // Journal of Applied Physics;7/1/2003, Vol. 94 Issue 1, p130 

    GaAs and InP crystals ion implanted with Si were athermally annealed by exposing each crystal at a spot of ∼2 mm diameter to a high-intensity 1.06 µm wavelength pulsed laser radiation with ∼4 J pulse energy for 35 ns in a vacuum chamber. As a result a crater is formed at the...

  • Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes. Temkin, H.; Dolan, G. J.; Panish, M. B.; Chu, S. N. G. // Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p413 

    InGaAs/InP quantum well layers grown by gas source molecular beam epitaxy have been used to fabricate quantum wires and boxes with transverse dimensions as small as ∼300 Å. These artificial structures exhibit intense low-temperature photoluminescence and show exciton shifts of...

  • Electronic properties of In0.53Ga0.47As-InP single quantum wells grown by chemical beam epitaxy. Frei, Michel; Tsui, D. C.; Tsang, W. T. // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p606 

    In0.53Ga0.47As-InP single quantum well (SQW) structures grown by chemical beam epitaxy (CBE) were studied using low-field magnetotransport, the quantum Hall effect, and far-infrared cyclotron resonance measurements at 4.2 K. We compare results on the two-dimensional electron gas (2DEG) in the...

  • Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy. Temkin, H.; Chu, S. N. G.; Panish, M. B.; Logan, R. A. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p956 

    Single InGaAs/InP quantum wells and superlattices grown by gas source molecular beam epitaxy were subjected to brief anneals at temperatures in the 600–850 °C range. The resulting increases in the well thickness and changes in composition were monitored by low-temperature...

  • Optical measurement of surface recombination in InGaAs quantum well mesa structures. Tai, K.; Hayes, T. R.; McCall, S. L.; Tsang, W. T. // Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p302 

    Surface recombination of optically created electron-hole plasma in InGaAs/InP quantum well mesa structures formed by chemical beam epitaxy followed by anisotropic plasma etching is observed optically by a picosecond pump-probe method. The exponential carrier lifetime in 3.3-μm-diam structures...

  • Intersubband absorption in highly strained InGaAs/InAlAs multiquantum wells. Asai, Hiromitsu; Kawamura, Yuichi // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p746 

    Highly strained In0.66 Ga0.34 As/In0.30 Al0.70 As multiquantum wells (MQWs) are successfully grown on (001)InP substrates by moleular beam epitaxy. Good crystal quality in the strained MQWs is confirmed by clear excitonic peaks and sharp photoluminescence spectra. Intersubband absorption at a...

  • InGaAs/InP distributed feedback quantum well laser. Temkin, H.; Tanbun-Ek, T.; Logan, R. A.; Olsson, N. A.; Sergent, M. A.; Wecht, K. W.; Cebula, D. A. // Applied Physics Letters;9/24/1990, Vol. 57 Issue 13, p1295 

    We describe InGaAs/InP multiquantum well distributed feedback (DFB) lasers with novel properties atrributable to the quantum well based active layer. The low internal loss waveguide and shallow gratings have allowed the fabrication of lasers with a cavity length varying from 0.5 to 2 mm, and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics