TITLE

Disordering of InGaAs-InP quantum wells by Si implantation

AUTHOR(S)
Tell, B.; Johnson, B. C.; Zyskind, J. L.; Brown, J. M.; Sulhoff, J. W.; Brown-Goebeler, K. F.; Miller, B. I.; Koren, U.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1428
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Selective disordering of In0.53Ga0.47As-InP multiple quantum well structures by ion implantation is demonstrated for the first time. As grown, annealed, and Si implanted and annealed samples were studied by transmission electron microscopy, optical absorption, and photoluminescence. A shift of the photoluminescence and absorption edge to higher energy was observed in implanted and annealed samples with respect to annealed only samples. This shift is attributed to a combination of disordering and Burstein–Moss effect.
ACCESSION #
9826604

 

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