Relationship between hole trapping and interface state generation in metal-oxide-silicon structures

Wang, S. J.; Sung, J. M.; Lyon, S. A.
April 1988
Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1431
Academic Journal
We have discovered a general relationship between the location of trapped holes and the subsequent generation of interface states. Experimentally, we find that a hole can become an interface state, but it must first be trapped between 20 and 70 Ã… from the Si/SiO2 interface (near-interfacial hole trap) and then transfer to within 18 Ã… of the interface (interfacial trapped holes). Finally, the hole captures an electron and becomes an interface state. The transfer process between near-interfacial and interfacial trapped holes does not seem to be a simple release-capture process. Rather it appears to involve a complicated migration of the trapped hole defect towards the interface. Radiation-hardened oxides are shown to have a similar number of near-interfacial traps, but these traps are shallower than those in the soft oxides.


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