Excimer laser-assisted metalorganic vapor phase epitaxy of CdTe on GaAs

Zinck, J. J.; Brewer, P. D.; Jensen, J. E.; Olson, G. L.; Tutt, L. W.
April 1988
Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1434
Academic Journal
We have successfully grown CdTe (111) on GaAs (100) at 165 °C using a 248 nm excimer laser to photodissociate dimethylcadmium and diethyltellurium in the gas phase. Good crystalline quality of the layers is confirmed by x-ray diffractometry. Growth rates up to 2 μm/h have been recorded in real time using time-resolved reflectivity. Auger analysis reveals that the films are stoichiometric throughout the thickness of the layer, and that carbon and oxygen contaminants are below the level of detectability. We have used laser-induced fluorescence spectroscopy to examine the photodissociation mechanism of diethyltellurium and have observed a linear dependence of Te atom production on excimer laser power.


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