Band gap and activation energy in amorphous silicon doping-modulated superlattices

Zhang, D. H.; Haneman, D.
April 1988
Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1392
Academic Journal
It has been found that both the activation energy and optical energy gap of amorphous silicon doping-modulated nipi... superlattices vary consistently with i layer thickness. There is a pronounced maximum at an i layer thickness of approximately 14 nm. The occurrence of this maximum, and the general variation, correspond exactly with the behavior of the persistent photoconductivity for the structures. The results are explained in terms of the development of deep trap boron-phosphorus complexes which are rendered shallow by hydrogen accretion.


Related Articles

  • Electronic structures of strained-layer superlattices (Si)2n/(Si1-xGex)2n (100) with n=1–10. Shen, Dingli; Zhang, Kaiming; Xie, Xide // Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p717 

    The empirical tight-binding method is used to calculate the electronic structures of type II strained-layer semiconductor superlattices (Si)2n /(Si1-x Gex )2n (100) with n=1–10. The effects of lattice-constant variation on nearest neighbor interactions have been taken into account. The...

  • Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application. Chaudhuri, Partha; Kole, Arindam; Haider, Golam // Journal of Applied Physics;Feb2013, Vol. 113 Issue 6, p064313 

    We have systematically studied a series of silicon carbide multilayer (#SiC) samples, each consisting of 30 periods of two alternating layers of microcrystalline silicon carbide (μc-SiC:H) having identical band gap of 2.2 eV but different amount of crystalline silicon volume fraction. The...

  • Factors responsible for the stability and the existence of a clean energy gap of a silicon nanocluster. Liu, Lei; Jayanthi, C. S.; Wu, Shi-Yu // Journal of Applied Physics;10/15/2001, Vol. 90 Issue 8, p4143 

    We present a critical theoretical study of electronic properties of silicon nanoclusters, in particular the roles played by symmetry, relaxation, and hydrogen passivation on the stability, the gap states and the energy gap of the system using the order N [O(N)] nonorthogonal tight-binding...

  • Angle-dependent bandgap engineering in gated graphene superlattices. García-Cervantes, H.; Gaggero-Sager, L. M.; Sotolongo-Costa, O.; Naumis, G. G.; Rodríguez-Vargas, I. // AIP Advances;2016, Vol. 6 Issue 3, p1 

    Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar properties as well as its possible technological implications. Among these characteristics we can mention: the extra Dirac points in the dispersion relation and the highly anisotropic propagation of the charge...

  • Photoreflectance study of AlAs/GaAs gradient period superlattice. Hongwei Xu; Xiaochuan Zhou // Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2193 

    Explores the possibility of constructing a graded band-gap barrier by gradient period (AlAs)[sub n]/(GaAs)[sub m] superlattice. Attribution of oscillation to oscillation induced by quasielectric field in the gradient period superlattice regions; Formation of graded band gap; Determination of...

  • Interband absorption in alpha-Sn/Ge short-period superlattices. Olajos, Janos; Wegscheider, Werner // Applied Physics Letters;12/28/1992, Vol. 61 Issue 26, p3130 

    Measures the band gap energy of Sn[sub 1]/Ge[sub m] superlattices. Determination of absorption coefficient; Dependence of the band gaps on temperature; Energy range of the band gap energies.

  • Electroluminescence at room temperature of a Si[sub n]Ge[sub m] strained-layer superlattice. Engvall, Jesper; Olajos, Janos; Grimmeiss, Hermann G.; Presting, Hartmut; Kibbel, Horst; Kasper, Erich // Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p491 

    Describes the electroluminescence of Si[sub n]Ge[sub m] strained-layer superlattice. Effect of short circuit photocurrent spectroscopy, voltage- and current-intensity measurements; Temperature dependence of the band gap energy; Involvement of interband recombination transition in...

  • Naturally formed In[sub x]Al[sub 1-x]As/In[sub y]Al[sub 1-y]As vertical superlattices. Sung Won Jun; Lee, J.H. // Applied Physics Letters;6/10/1996, Vol. 68 Issue 24, p3443 

    Examines the naturally formed In[sub x]Al[sub 1-x]As/In[sub y]Al[sub 1-y]As vertical superlattices. Formation in the layers of nominal composition In[sub 0.52]Al[sub 0.48]As grown on exactly (001)-oriented indium phosphide substrates; Occurrence of CuPt type ordering; Band gap reduction in the...

  • Disorder of an AlxGa1-xAs-GaAs superlattice by donor diffusion. Meehan, K.; Holonyak, N.; Brown, J. M.; Nixon, M. A.; Gavrilovic, P.; Burnham, R. D. // Applied Physics Letters;1984, Vol. 45 Issue 5, p549 

    The Si impurity is diffused (850 °C, 10 h, xj ∼2.4 μm) into 2.4 μm of AlxGa1-xAs-GaAs (x>=0.6) superlattice (barrier LB ≊320 Å, quantum well Lz ≊280 Å) and disorders it into bulk-crystal Alx′Ga1-x′As (x′>=0.32). The as-grown infrared gap...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics