Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering

Epler, J. E.; Thornton, R. L.; Paoli, T. L.
April 1988
Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1371
Academic Journal
Data are presented on high-quality buried heterostructure lasers fabricated by laser-assisted disordering of GaAs-AlGaAs quantum well heterostructures. The typical cw threshold current is 4 mA and the maximum power output is 27 mW. The devices exhibit single fundamental mode operation with 34 dB attenuation of longitudinal side modes.


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