TITLE

Electrical properties of a CdTe/InSb hetero metal-insulator-semiconductor structure

AUTHOR(S)
Shiina, K.; Tanaka, Y.; Sugiura, O.; Oda, S.; Matsumura, M.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1306
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrical properties of a metal/CdTe/InSb metal-insulator-semiconductor structure have been investigated by capacitance-voltage and conductance-voltage measurements for the first time at 77 K. Interfaces of both p- and n-type InSb substrates can be controlled from accumulation states to inversion states. Distribution of interface state density evaluated by the Terman method is U shaped with the minimum value of 1012 cm-2 eV-1.
ACCESSION #
9826563

 

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