Carrier confinement photoconductive detector

Jalali, B.; Evans, H. L.; Yang, E. S.
April 1988
Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1323
Academic Journal
We propose a new device, the carrier confinement photoconductive detector, in which an improvement in performance over a conventional photoconductor is achieved by confinement of photogenerated carriers in the active channel. The confinement can be realized by placing a layer of a wide band-gap semiconductor between the channel and ohmic contact. Analytical and numerical analyses show that gain-bandwidth improvement of 100% can be achieved by using the GaAl/AlGaAs system.


Related Articles

  • Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8–12 μm infrared detectors. Changtao Peng; NuoFu Chen; Fubao Gao; Xingwang Zhang; Chenlong Chen; Jinliang Wu; Yude Yu // Applied Physics Letters;6/12/2006, Vol. 88 Issue 24, p242108 

    High-quality InAsxSb1-x (0≤x≤=0.3) films are grown on GaAs substrates by liquid phase epitaxy and electrical and optical properties of the films are investigated, revealing that the films exhibit Hall mobilities higher than 2×104 cm2 V-1 s-1 and cutoff wavelengths longer than 10...

  • COMPARISON OF InGaAs/InP PHOTODETECTORS FOR MICROWAVE APPLICATIONS. Peredo, E.; Decoster, D.; Gouy, J. P.; Vilcot, J. P.; Constant, M. // Microwave & Optical Technology Letters;5/1/94, Vol. 7 Issue 7, p332 

    The purpose of this article is to compare the microwave performance of three photodetector types, an lnGaAs/lnP p-i-n photo-diode, an interdigitated lnA/As/ lnGaAs/ lnP metal-semiconductor-metal (MSM) photodiode, and an interdigitated lnGaAs/ lnP photo-conductor (PC). Static and dynamic...

  • High-speed GaAs/AlGaAs photoconductive detector using a p-modulation-doped multiquantum well structure. Kaede, K.; Arakawa, Y.; Derry, P.; Paslaski, J.; Yariv, A. // Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1096 

    A new type of high-speed GaAs/AlGaAs photoconductive detector utilizing the high drift velocity of minority electrons in a p-modulation doped multiquantum well structure is demonstrated. In this modulation-doped structure, the electron scattering is reduced, which leads to the enhancement of the...

  • Transit time limited response of GaAs metal-semiconductor-metal photodiodes. Klingestein, M.; Kuhl, J.; Rosenzweig, J.; Moglesture, C.; Axmann, A. // Applied Physics Letters;6/3/1991, Vol. 58 Issue 22, p2503 

    Investigates the response of gallium arsenide (GaAs) metal-semiconductor-metal (MSM) photodiodes at low temperatures in the time domain by photoconductive sampling. Description of the dependence of the response time on temperature by phonon mediated intervalley and intravalley scattering;...

  • Analysis of nonohmic current-voltage characteristics in a Cu-compensated GaAs photoconductor. Mazzola, Michael S.; Roush, Randy A.; Stoudt, David C.; Griffiths, Scott F. // Applied Physics Letters;9/2/1991, Vol. 59 Issue 10, p1182 

    Observes nonohmic current conduction in a copper-compensated gallium arsenide photoconductive switch. Applications of photoconductive switch; Compilation of the current-voltage characteristics of the sample during peak illumination; Description of the numerical double-injection model.

  • Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 μm probe. Tani, Masahiko; Lee, Kwang-Su; Zhang, X.-C. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9 

    THz radiation is detected by a low-temperature-grown GaAs (LT-GaAs) photoconductive antenna probed with a 1.55 μm probe laser. The detection efficiency is found to be approximately 10% of that obtained with a 780 nm probe. From the nonquadratic dependence of photoconductivity on laser...

  • Reduction of fall times in Ga0.47In0.53As photoconductive receivers through back gating. Chen, C. Y.; Cho, A. Y.; Olsson, N. A.; Garbinski, P. A. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p296 

    We have observed the reduction of fait times in Ga[sub 0.47]In[sub 0.53] As photoconductive receivers by applying a reverse back gate voltage. A reduction of fall times from 7 to ≈ 1 ns was obtained with a back gate voltage as low as 1.1 V. The increase in response speeds reduced the bit...

  • 2 ps InGaAs photoconductors and their speed-of-response evaluation by optical pulse mixing at inherent nonlinearities. Loepfe, R.; Schaelin, A.; Melchior, H.; Blaser, M.; Jaeckel, H.; Bona, G. L. // Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2130 

    Miniaturized In0.53Ga0.47As/InP photoconductors with nanosecond response times were integrated into broadband coplanar 50 Ω microwave structures and their response times shortened by 14 MeV Be3+-ion implants. Using Carruther’s pulse-mixing technique, which relies on the nonlinearities...

  • Optically enhanced photoconductivity in semi-insulating gallium arsenide. Desnica, U. V.; Šantic, B. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p810 

    Time evolution of photoconductivity of semi-insulated gallium arsenide illuminated at low temperatures with monochromatic 0.7–1.8 eV photons was studied. For low light intensity the photosensitivity increases with time by several orders of magnitude and exhibits different dynamics for...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics