TITLE

Short-wavelength (∼625 nm) room-temperature continuous laser operation of In0.5(AlxGa1-x)0.5P quantum well heterostructures

AUTHOR(S)
Nam, D. W.; Deppe, D. G.; Holonyak, N.; Fletcher, R. M.; Kuo, C. P.; Osentowski, T. D.; Craford, M. G.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1329
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In1-y(AlxGa1-x)yP-In1-y (AlxGa1-x)yP quantum well heterostructures grown lattice matched (y≊0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (Jth∼104 A/cm2, 625 nm) of diodes fabricated from the same crystal is described.
ACCESSION #
9826557

 

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