Two-dimensional behavior of molecular beam epitaxy grown HgTe

Justice, R. J.; Seiler, D. G.; Zawadzki, W.; Koestner, R. J.; Goodwin, M. W.
April 1988
Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1332
Academic Journal
Two-dimensional electronic properties of HgTe films (∼2 μm thick) grown by molecular beam epitaxy on CdTe substrates have been investigated by using the Shubnikov–de Haas effect. Electron densities, effective masses, and Dingle temperatures of three electric subbands in an accumulation layer near the HgTe-CdTe interface have been determined for two samples with different total densities. The results exhibit behavior typical of an asymmetric triangular potential well and a pronounced band nonparabolicity.


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