TITLE

Two-dimensional behavior of molecular beam epitaxy grown HgTe

AUTHOR(S)
Justice, R. J.; Seiler, D. G.; Zawadzki, W.; Koestner, R. J.; Goodwin, M. W.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1332
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Two-dimensional electronic properties of HgTe films (∼2 μm thick) grown by molecular beam epitaxy on CdTe substrates have been investigated by using the Shubnikov–de Haas effect. Electron densities, effective masses, and Dingle temperatures of three electric subbands in an accumulation layer near the HgTe-CdTe interface have been determined for two samples with different total densities. The results exhibit behavior typical of an asymmetric triangular potential well and a pronounced band nonparabolicity.
ACCESSION #
9826555

 

Related Articles

  • Very high mobility HgTe films grown on GaAs substrates by molecular-beam epitaxy. Feldman, R. D.; Oron, M.; Austin, R. F.; Opila, R. L. // Journal of Applied Physics;4/15/1988, Vol. 63 Issue 8, p2872 

    Presents a study that examined the molecular beam epitaxial growth of mercury telluride (HgTe) films on gallium arsenide substrates. Analysis of the Hall mobility of HgTe film; Determination of the presence of impurities during epitaxial growth; Methodology.

  • Infrared properties and band gaps of HgTe/CdTe superlattices. Jones, C. E.; Casselman, T. N.; Faurie, J. P.; Perkowitz, S.; Schulman, J. N. // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p140 

    Measurement of the optical transmission spectra of four HgTe/CdTe superlattices grown by molecular beam epitaxy has been carried out at 300 and 30 K to determine the absorption coefficients, refractive indexes, and band-gap energies. In ail cases the optical absorption coefficients reached high...

  • Growth and properties of dilute magnetic semiconductor superlattices containing Hg1-xMnxTe. Harris, K. A.; Hwang, S.; Lansari, Y.; Cook, J. W.; Schetzina, J. F. // Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p713 

    We report details of the successful growth by molecular beam epitaxy of superlattices containing alternating layers of Hg1-xMnxTe and HgTe. These structures are the first superlattices containing layers of a mercury-based dilute magnetic semiconductor (Hg1-xMnxTe ) to be grown by any thin-film...

  • Self-compensation in PbSe:Tl thin films. Zykov, V. A.; Gavrikova, T. A.; Nemov, S. A.; Osipov, P. A. // Semiconductors;Jan1999, Vol. 33 Issue 1, p22 

    Processes of defect formation are investigated in epitaxial PbSe:Tl films prepared by vacuum evaporation from molecular beams at various condensation temperatures from mixtures with a thallium content of 0-1.6 at. %. It is established that an increase in the content of the acceptor impurity in...

  • Preparation of PrBa[sub 2]Cu[sub 3]O[sub y]/YBa[sub 2]Cu[sub 3]O[sub y] epitaxial films using... Obara, H.; Kosaka, S.; Kimura, Y. // Applied Physics Letters;1/21/1991, Vol. 58 Issue 3, p298 

    Discusses the preparation of PrBa[sub 2]Cu[sub 3]O[sub y] (PBCO) films and PBCO/YBa[sub 2]Cu[sub 3]O[sub y] (YBCO) layered structures using molecular beam epitaxy. X-ray diffraction pattern of the PBCO film; Lattice constant of YBCO/Pr[sub 1+x]Ba[sub 2-x]Cu{sub 3]O[sub y] bilayers; Temperature...

  • Atomic layer and unit cell layer growth of (Ca,Sr)CuO[sub 2] thin film by laser molecular beam... Kanai, Masaki; Kawai, Tomoji; Kawai, Shichio // Applied Physics Letters;2/18/1991, Vol. 58 Issue 7, p771 

    Investigates atomic layer and unit cell growth of (Ca,Sr)CuO[sub 2] thin film by laser molecular beam epitaxy. Use of reflection high-energy electron diffraction (RHEED); Analyses of RHEED patterns; Occurrence of the layer growth with the unit-cell layer.

  • Molecular beam epitaxy and characterization of CdTe(211) and CdTe (133) films on GaAs(211)B... Lange, M.D.; Sporken, R.; Mahavadi, K.K.; Faurie, J.P.; Nakamura, Y.; Otsuka, N. // Applied Physics Letters;5/6/1991, Vol. 58 Issue 18, p1988 

    Describes molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) thin films on GaAs(211)B substrates. Dependence of the orientation of the epitaxy on the thermal cleaning process.

  • Vacancy ordering of Ga[sub 2]Se[sub 3] films by molecular beam epitaxy. Teraguchi, Nobuaki; Kato, Fuji; Konagai, Makoto; Takahashi, Kiyoshi; Nakamura, Yoshio; Otsuka, Nobuo // Applied Physics Letters;7/29/1991, Vol. 59 Issue 5, p567 

    Investigates the vacancy ordering of Ga[sub 2]Se[sub 3] films by molecular beam epitaxy. Method of obtaining the single-crystal films; Observation of extra diffraction spots; Confirmation of parallel epitaxial relationship between the substrate and the overlayers.

  • Chi[sup 3] components of single-crystalline vanadyl phthalocyanine film. Hoshi, Hajime; Kohama, Keiichi; Fang, Shaoli; Maruyama, Yusei // Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3080 

    Investigates the growth of single-crystalline vanadyl phthalocyanine thin film by molecular-beam epitaxy technique. Determination of the chi[sup 3] components by third harmonic generation; Use of the neodynium:yttrium aluminum garnet laser source; Origin of the nondiagonal chi[sup 3] component.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics