Measurement of the valence-band discontinuities for molecular organic semiconductor/inorganic semiconductor heterojunctions

So, F. F.; Forrest, S. R.
April 1988
Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1341
Academic Journal
Using the temperature dependence of the forward-biased current-voltage characteristics as well as internal photoemission, we directly measure the barrier potential and valence-band discontinuity energy (ΔEv ) of isotype heterojunctions formed between thin films of the crystalline organic semiconductor: 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and p-Si. We find ΔEv =(0.50±0.02) eV. This, to our knowledge, is the first report of a measurement of a band discontinuity energy between a crystalline organic semiconductor and an inorganic semiconductor. These results are consistent with predictions of a current model involving diffusion and drift in the organic-on-inorganic (OI) semiconductor device. This model is employed to calculate ΔEv using previously obtained barrier energies for several different PTCDA/inorganic semiconductor devices. In all cases, values of the barrier diffusion potential and ΔEv are considerably smaller than apparent barrier energies obtained previously using pure thermionic emission theory to explain transport of charge over the OI barrier.


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