TITLE

Effects of processing conditions on negative bias temperature instability in metal-oxide-semiconductor structures

AUTHOR(S)
Lu, D.; Ruggles, G. A.; Wortman, J. J.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1344
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Radiation from electron beam metallization has been found to result in damage to metal-oxide-semiconductor structures, which, when not properly annealed out, can lead to severe negative bias temperature instability (NBTI), even at room temperature. Similarly, rapid thermal annealing (RTA) after oxidation can result in significant room-temperature instability. The post-metal-annealing behavior of this RTA-induced instability depends on the high-temperature annealing ambient (Ar vs O2). Processing in O2 can also lead to significant NBTI; however, following such steps by an Ar anneal at the same temperature can negate the effect, and in some cases, lead to an overall reduction in NBTI. An electrical current flows during the stressing measurement and can be correlated with the development of oxide positive charge. This finding supports a model for charge buildup during NBT stressing in which holes from the Si substrate become trapped in intrinsic hole traps located within the oxide.
ACCESSION #
9826548

 

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