Low-temperature amorphous-to-crystalline transformation of CoSi2 films

Cros, A.; Tu, K. N.; Smith, D. A.; Weiss, B. Z.
April 1988
Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1311
Academic Journal
Amorphous-to-crystalline transformation of e-gun co-deposited CoSi2 films occurs from 150 to 200 °C, as observed by in situ resistivity measurement and transmission electron microscopy. Resistivity changes abruptly from 1500 to 110 μΩ cm as the amorphous film transforms into circular crystallites that are circular before impingement occurs. A room-temperature resistivity of 30 μΩ cm was obtained by annealing the film to 500 °C.


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