TITLE

Observation of electron quantum interference effects due to virtual states in a double-barrier heterostructure at room temperature

AUTHOR(S)
Potter, Robert C.; Lakhani, Amir A.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1349
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Strong electron quantum interference effects have been observed at room temperature in the current-voltage characteristics of a double-barrier, wide-well, lattice-matched In0.52Al0.48As /In0.53Ga0.47As heterostructure tunneling device. A total of 22 oscillations was observed in the differential conductance. A model is proposed which attributes ten of the oscillations to the usual resonant tunneling via the subbands and the rest to the presence of virtual states that exist in the well and second barrier regions.
ACCESSION #
9826520

 

Related Articles

  • The Electrical and Photoelectrical Properties of n-In[sub 2]Se[sub 3]–p-InSe Heterostructures. Drapak, S. I.; Netyaga, V. V.; Kovalyuk, Z. D. // Technical Physics Letters;Sep2002, Vol. 28 Issue 9, p711 

    The current-voltage and voltage-capacitance characteristics of an originally fabricated photosensitive, radiation-stable n-In[sub 2]Se[sub 3]-p-InSe heterostructure were measured at liquid nitrogen temperature and in the temperature interval from 230 to 330 K. It is established that the direct...

  • Lifetime of nonequilibrium carriers in semiconductors from the standpoint of a collective interaction in the process of radiative recombination. Zaıtsev, S. V.; Georgievskiı, A. M. // Semiconductors;Mar1998, Vol. 32 Issue 3, p332 

    InGaAsP/InP laser heterostructures in the continuous pumping regime were investigated by autocorrelation methods. It was shown that below and above the lasing threshold the laser radiation consists of ultrashort coherent pulses and the temporal coherence of these pulses was measured. The...

  • Method of Envelope Functions and Intervalley Γ–X[sub z] Interaction of States in (001) III–V Semiconductor Heterostructures. Takhtamirov, É. E.; Volkov, V. A. // Journal of Experimental & Theoretical Physics;Jun2000, Vol. 90 Issue 6, p1063 

    The kp method is used to analyze the problem of intervalley Γ-X[sub z] interaction of conduction-band states in the (001) lattice-matched III-V semiconductor heterostructures. A convenient basis for expansion of the wave function is systematically selected and a multiband system of equations...

  • SrTiO[sub 3]-based metal-insulator-semiconductor heterostructures. Pallecchi, Ilaria; Grassano, Giuseppe; Marré, Daniele; Pellegrino, Luca; Putti, Marina; Siri, Antonio Sergio // Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2244 

    We explored the feasibility of employing strontium titanate (SrTiO[sub 3]) as semiconducting material in field-effect metal-insulator-semiconductor epitaxial heterostructures. This idea was suggested by the observation of a dramatic effect of the oxygen deficiency on SrTiO[sub 3-δ] transport...

  • Resonant-cavity-enhanced heterostructure metal–semiconductor–metal photodetector. Chen, Xiying; Nabet, Bahram; Quaranta, Fabio; Cola, Adriano; Currie, Marc // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3222 

    We report a GaAs-based high-speed, resonant-cavity-enhanced, heterostructure metal–semiconductor–metal photodetector with Al[sub 0.24]Ga[sub 0.76]As/Al[sub 0.9]Ga[sub 0.1]As distributed Bragg reflector operating around 850 nm. The photocurrent spectrum shows a clear peak at this...

  • New features of injection phenomena in graded semiconductor structures with intervalley crossover. Peka, H. P.; Pulemyotov, D. A.; Radzivilyuk, V. A. // Journal of Applied Physics;4/15/1994, Vol. 75 Issue 8, p4040 

    Presents information on a study which examined the effect of injected charge carrier accumulations (depletion) at the intervalley crossover of a graded semiconductor. Insight on the heterojunctions of alloy compounds with position-dependent composition. Methodology of the study; Results and...

  • Temperature dependence of the electron-phonon scattering time of charge carriers in p-Si/SiGe heterojunctions. Andrievskií, V. V.; Berkutov, I. B.; Komnik, Yu. F.; Mironov, O. A.; Whall, T. E. // Low Temperature Physics;Dec2000, Vol. 26 Issue 12 

    Si/Si[sub 0.64]Ge[sub 0.36] heterojunctions with p-type conductivity exhibit an electron overheating effect. An analysis of the damping of the amplitudes of the Shubnikov-de Haas oscillations upon a change in temperature and applied electric field yields the temperature dependence of the...

  • Spectroellipsometry for characterization of Zn1-xCdxSe multilayered structures on GaAs. Lee, Joungchel; Collins, R. W.; Heyd, A. R.; Flack, F.; Samarth, N. // Applied Physics Letters;10/7/1996, Vol. 69 Issue 15, p2273 

    The dielectric functions of 0.5–1.5-μm-thick Zn1-xCdxSe (0≤x≤0.34) epilayers on (100) GaAs were measured by spectroellipsometry (SE) over the photon energy range 1.5≤E≤5.3 eV. These spectra were parameterized using the Sellmeier and Lorentz equations for photon...

  • Correlation between barrier height and band offsets in metal/Si[sub 1-x]Ge[sub x]/Si heterostructures. Nur, O.; Karlsteen, M.; Willander, M.; Turan, R.; Aslan, B.; Tanner, M. O.; Wang, K. L. // Applied Physics Letters;12/28/1998, Vol. 73 Issue 26, p3920 

    The variation of barrier height with the band gap in the metal/heterojunction systems is related to how the Fermi level position varies with respect to band edges. If the Fermi level is pinned by the interface states its movement will also correspond to the movement of the neutrality level at...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics