TITLE

Radiation-enhanced diffusion of Au in amorphous Si

AUTHOR(S)
Priolo, F.; Poate, J. M.; Jacobson, D. C.; Linnros, J.; Batstone, J. L.; Campisano, S. U.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1213
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The radiation-enhanced diffusion of implanted Au markers in amorphous Si has been measured in the temperature range 77–693 K. Samples were irradiated with 2.5 MeV Ar ions. The diffusion coefficients show three well-defined regions. For temperatures <400 K, diffusion is athermal and due to ballistic mixing. For temperatures in the range 400–700 K diffusion is Arrhenius-type with an activation energy of 0.37 eV and is considerably enhanced over the normal thermal diffusion. The defects that cause the enhanced diffusion come from nuclear energy loss processes. Thermal diffusion, with an activation energy of 1.42 eV, dominates at temperatures greater than 750 K.
ACCESSION #
9826513

 

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