TITLE

Epitaxial growth of GaAs/NiAl/GaAs heterostructures

AUTHOR(S)
Sands, T.; Harbison, J. P.; Chan, W. K.; Schwarz, S. A.; Chang, C. C.; Palmstro\m, C. J.; Keramidas, V. G.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1216
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial GaAs/NiAl/GaAs heterostructures consisting of buried NiAl layers and GaAs overlayers that are monocrystalline and well aligned have been fabricated by a combination of solid-phase reactions and molecular beam epitaxy. The structures have been characterized by reflection high-energy electron diffraction, electron microscopy, and ion channeling. The achievement of these stable and epitaxial buried-metal heterostructures makes possible the fabrication of metal-base and permeable-base transistors, buried interconnects, and buried ground planes.
ACCESSION #
9826510

 

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