Zinc-enhanced beryllium redistribution in GaAs/GaAlAs grown by molecular beam epitaxy

Houston, P. A.; Shepherd, F. R.; SpringThorpe, A. J.; Mandeville, P.; Margittai, A.
April 1988
Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1219
Academic Journal
A study of the effect of zinc diffusion into beryllium- and silicon-doped GaAs/Ga0.7Al0.3As structures has been carried out. The beryllium dopant was found to diffuse very rapidly as a result of the presence of diffusing zinc, while the silicon remained unaffected. A mechanism is proposed whereby competition for the gallium sites causes the beryllium to move interstitially wherever zinc is present.


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