Pseudomorphic ZnSe/n-GaAs doped-channel field-effect transistors by interrupted molecular beam epitaxy

Studtmann, G. D.; Gunshor, R. L.; Kolodziejski, L. A.; Melloch, M. R.; Cooper, J. A.; Pierret, R. F.; Munich, D. P.; Choi, C.; Otsuka, N.
April 1988
Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1249
Academic Journal
The fabrication and current-voltage characteristics of the first depletion-mode field-effect transistors based on a pseudomorphic ZnSe/n-GaAs heterointerface are described. The devices are doped-channel field-effect transistors produced by means of interrupted growth with the use of two separate molecular beam epitaxy systems. Very strong (visible to the naked eye) reflection high-energy electron diffraction intensity oscillations persist for 120 periods when ZnSe is nucleated on the GaAs epilayer. The current-voltage characteristics of the transistors are close to ideal; channel modulation indicates that the Fermi level is not pinned at the ZnSe/GaAs interface.


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