Observation of charge-separating defects in HgCdTe using remote contact electron beam induced current

Bubulac, L. O.; Tennant, W. E.
April 1988
Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1255
Academic Journal
A spatially resolved electron beam technique, remote contact electron beam induced current, has been developed to detect and map charge-separating defects in HgCdTe with two remote sample contacts. This technique, characterized by a high spatial resolution, ∼1 μm, and a high sensitivity (signal/noise) to fields produced by inclusions, damage, dislocations, strain, p-n junctions, and possibly compositional (band gap) and doping variations, shows promise for analyzing materials, passivation coatings, and diode arrays without making contacts to the individual devices.


Related Articles

  • Reconstruction of the charge collection probability in a semiconductor diode from collection efficiency measurements by the regularization method. Donolato, C. // Journal of Applied Physics;5/15/1991, Vol. 69 Issue 10, p7287 

    Presents a study which developed a method for directly reconstructing of the distribution of the charge collection probability in a semiconductor diode from collection efficiency measurements. Theory; Application of the method; Discussion and conclusion.

  • Effects of surface recombination on carrier distributions and device characteristics. Mui, David S. L.; Coldren, L. A. // Journal of Applied Physics;9/1/1995, Vol. 78 Issue 5, p3208 

    Focuses on the effects of surface recombination on carrier distributions and device characteristics. Use of the Shockley-Reed Hall recombination mechanism; Calculation of the influence of surface recombination on the performance of ridge-type devices; Limitations of the surface recombination...

  • Phosphorus-induced positive charge in native oxide of silicon wafers. Shimizu, Hirofumi; Munakata, Chusuke // Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3598 

    Examines the phosphorus (P)-induced positive charge in native oxide of silicon wafers. Factor contributing to the appearance of the negative charge in the native oxide; Purpose of developing the scanning photon microscope; Rationale for the action of P ion as a positive charge.

  • Determination of trapped charge distributions in the dielectric of a metal-oxide-semiconductor structure. Przewlocki, H. M. // Journal of Applied Physics;6/15/1985, Vol. 57 Issue 12, p5359 

    Describes a method of approximate determination of the trapped charge distribution in the dielectric of a metal-oxide-semiconductor (MOS) structure. Information on the theory of photocurrent versus gate voltage characteristics of MOS structures; Calculations for various charge profiles.

  • Use of surface charging in x-ray photoelectron spectroscopic studies of ultrathin dielectric films on semiconductors. Lau, W. M. // Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p338 

    The use of surface charging of a thin dielectric film on a semiconductor during x-ray photoelectron spectroscopic analysis has been investigated. The binding energy shifts measured from 1.5 nm SiO2/p-Si and 4 nm Si3N4/n-InP indicate that a positive surface potential can be induced by the loss of...

  • 1/f noise produced by the random motion of the carriers crossing potential barriers in semiconductors. Yoshida, Hiromichi; Yoshida, Masanori; Shinoda, Tsutomu; Saito, Ihoe // Journal of Applied Physics;12/1/1994, Vol. 76 Issue 11, p7372 

    Studies 1/Æ’ noise produced by the random motion of the carriers crossing potential barriers in semiconductors. Description of the random motion carriers; Relationship between the trapped charge and the change of resistance; Potential fluctuation of a semiconductor and two electrodes.

  • Density of states in semiconductor nanostructures. Shum, Kai // Journal of Applied Physics;5/1/1991, Vol. 69 Issue 9, p6484 

    Presents a study in which the density of electronic states (DOS) is directly counted in energy space for semiconductor nanostructures in which electrons are confined in all three dimensions. Equation given for DOS for ideal one-dimensional, two-dimensional and three-dimensional electron...

  • p-n junction peripheral current analysis using gated diode measurements. Czerwinski, A.; Simoen, E.; Claeys, C. // Applied Physics Letters;6/29/1998, Vol. 72 Issue 26 

    A modified method for analysis of the current–voltage characteristics of a gated diode structure is proposed and validated in order to investigate the peripheral reverse current in a silicon p-n junction diode. The peripheral generation current in modern p-n diodes is attributed fully to...

  • Charge state of the natural EX defect in thermal SiO[sub 2]. Stesmans, A.; Scheerlinck, F. // Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2282 

    Analyzes the charge state of the EX defect in thermal silicon dioxide. Use of K-band electron spin resonance and capacitance-voltage measurements; Relationship between EX defect passivation and charge neutralization of the centers; Factors responsible for the EX defects.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics