TITLE

Single-crystal x-ray diffraction study of the InGaAs-GaAsP/GaAs superlattice system

AUTHOR(S)
Jiang, B-L.; Shimura, F.; Rozgonyi, G. A.; Hamaguchi, N.; Bedair, S. M.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1258
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single-crystal x-ray rocking curve and transmission imaging topography techniques have been used for the characterization of InGaAs-GaAsP strained-layer superlattices (SLS’s), which are lattice matched to GaAs substrates. The thicknesses of the SLS’s and strains, 〈ε⊥〉 and 〈ε||〉, were readily determined nondestructively by analyzing the rocking curves obtained with Cu Kβ1 radiation. These quantitative data were combined with the qualitative defect imaging results of x-ray topography to determine the critical intrinsic SLS thickness tISc (=PSL〈ε||〉c) that dominates the generation of misfit dislocations. It was estimated for the InGaAs-GaAsP SLS on a GaAs substrate as 1.05×10-3 Å
ACCESSION #
9826492

 

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