Laser desorption of polymer in a plasma reactor

Holber, W.; Gaines, D.; Yu, C. F.; Osgood, R. M.
April 1988
Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1204
Academic Journal
Low-power ultraviolet (350 nm) laser light has been used to inhibit polymer formation on silicon in a plasma reactor containing CF4 /H2 reactants. The resultant increase in etch rate has been studied as a function of hydrogen partial pressure. Auger electron spectroscopy reveals a reduction in polymer formation in the area illuminated by the laser.


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