TITLE

Elimination of secondary defects in As-implanted Si by high concentration oxygen atoms

AUTHOR(S)
Tamura, M.; Horiuchi, M.; Ito, T.; Abe, T.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1210
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Arsenic precipitate-induced dislocation loops generated at the projected range Rp of As in high-dose As-implanted, annealed (100) Si are eliminated, if oxygen-atom concentrations at the Rp region are high, i.e., above about 1×1020 atoms/cm3 . This is confirmed by the following two experiments: 80 keV, 2×1016 As+/cm2, 18-nm-thick through-oxide implantation together with subsequent annealing and a double implantation of 80 keV, 2×1016 As+ /cm2 and 22 keV, 5×1015 O+ /cm2 , followed by an annealing sequence. Experimental results suggest that the bonding of several As atoms with one oxygen atom suppresses As clustering.
ACCESSION #
9826471

 

Related Articles

  • Removal of oxygen atoms from a SiO[sub 2] surface by incoherent vacuum ultraviolet excimer irradiation. Ohtsubo, T.; Azuma, T.; Takaura, M.; Higashiguchi, T.; Kubodera, S.; Sasaki, W. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 2, p139 

    We have demonstrated the non-thermal removal of oxygen atoms from an oxidized silicon surface (SiO[sub 2] ) on a silicon wafer by the use of a low-power (0.3 mW cm[sup -2] ) incoherent vacuum ultraviolet (VUV) light source at 126 nm. X-ray photoelectron spectroscopy (XPS) has shown that a...

  • Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals. Makara, V. A.; Steblenko, L. P.; Kolchenko, Yu. L.; Naumenko, S. M.; Lisovsky, I. P.; Mazunov, D. O.; Mokliak, Yu. Yu. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2006, Vol. 9 Issue 2, p1 

    IR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect of magnetic field on the defect structure of the investigated crystals.

  • Saturated carboxylic acids on silicon: a first-principles study. Cucinotta, Clotilde; Ruini, Alice; Caldas, Marilia J.; Molinari, Elisa // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1067 

    We present a first-principles calculation of the energetics of different possible dissociative chemisorption reactions leading to the attachment of organic acids with a functional carboxylic group to a hydrogenated silicon surface. Our study allows us to understand the role of oxygen atoms in...

  • Molecular dynamics study of Si(100)-oxidation: SiO and Si emissions from Si/SiO2 interfaces and their incorporation into SiO2. Norihiko Takahashi; Takahiro Yamasaki; Chioko Kaneta // Journal of Applied Physics;2014, Vol. 115 Issue 22, p224303-1 

    Dynamics of Si(100)-oxidation processes at the Si/SiO2 interface and in the SiO2 region are investigated focusing on SiO and Si emissions from the interface and the following incorporation into the SiO2 and/or substrate. Classical molecular dynamics (MD) simulations with variable charge...

  • γ-Silylated α,β-unsaturated amides — Preparation by [1,5]-sigmatropic rearrangement and use as masked dienolate equivalents in carbonyl condensations1. Green, James R.; Alo, Babajide I.; Majewski, Marek; Snieckus, Victor // Canadian Journal of Chemistry;Jun2009, Vol. 87 Issue 6, p745 

    The reaction of lithium dienolates derived from N,N-dialkylsenecioamides (1a–1c) with triorganosilyl electrophiles occurs initially at the oxygen atom predominantly, and is followed by an O → C silicon migration to afford the γ-silylated senecioamides (4a–4h). The...

  • Fermi level pinning and Hf–Si bonds at HfO2: Polycrystalline silicon gate electrode interfaces. Xiong, K.; Peacock, P. W.; Robertson, J. // Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p012904 

    Doped polycrystalline Si (poly-Si) gate electrodes on HfO2 films on Si substrates are found not to cause as large shifts in the flat band voltage as those of SiO2 on Si. This effect has been attributed to a weak pinning of the Fermi level at the top poly-Si HfO2 interface. The effect is shown to...

  • Dynamics of SiO desorption in reactive scattering of O2 with a silicon surface. Nakamura, Kazutaka G.; Kamioka, Isao; Kitajima, Masahiro // Journal of Chemical Physics;3/1/1996, Vol. 104 Issue 9, p3403 

    The reactive scattering of O2, from a pulsed molecular beam, with a hot Si(100) (about 1250 K) has been studied with resonance enhanced multiphoton ionization (REMPI) mass spectroscopy in the wavelength region between 282 and 295 nm (F 1Σ+←X 1Σ+ and H 1Σ+←X 1Σ+). The...

  • Electron energy-loss spectroscopy study of a multilayered SiOx and SiOxCy film prepared by plasma-enhanced chemical vapor deposition. Zhang, Zaoli; Wagner, Thomas; Sigle, Wilfried; Schulz, Andreas // Journal of Materials Research;Mar2006, Vol. 21 Issue 3, p9 

    A multilayered structure of SiOx and SiOxCy on silicon substrate was prepared by plasma-enhanced chemical vapor deposition from gas mixtures of hexamethyldisiloxane and oxygen. Scanning transmission electron microscopy studies showed that the structure is well defined with distinct layers. The...

  • An ode to the atomic weights. Meija, Juris // Nature Chemistry;Sep2014, Vol. 6 Issue 9, p749 

    The article offers information on atomic weights. Modern periodic tables show variations of atomic weights in nature, and the eighth digit of the atomic weight of silicon in silicon-28 crystal sphere is being examined in detail. Natural differences in the isotopic composition of oxygen and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics