TITLE

Effect of copper related defects on the electron transport properties of semi-insulating CdSe

AUTHOR(S)
Roth, M.; Burger, A.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1234
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Semi-insulating CdSe crystals with a reduced concentration of electron trapping centers have been grown and characterized. The existence of complex electron traps is attributed to the presence of trace copper impurity. The trap density, trap level depth, trapping time, cross section for trapping of electrons, and the electron mobility have been determined for the first time on one single CdSe crystal using the combination of space-charge-limited currents (SCLC’s) method, standard nuclear measurements, and the transient charge technique (TCT). The advantages for applications of semi-insulating CdSe as a novel material for spectrometer grade nuclear radiation detectors are emphasized.
ACCESSION #
9826461

 

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