Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs

Park, S. H.; Morhange, J. F.; Jeffery, A. D.; Morgan, R. A.; Chavez-Pirson, A.; Gibbs, H. M.; Koch, S. W.; Peyghambarian, N.; Derstine, M.; Gossard, A. C.; English, J. H.; Weigmann, W.
April 1988
Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1201
Academic Journal
We present a systematic study of the dependence of the optical nonlinearities on quantum well thickness for GaAs/AlGaAs multiple quantum wells (MQW’s) at room temperature and compare them with bulk GaAs. The maximum change in the refractive index is greatest for the MQW’s with the smallest well size and decreases with increasing well size, reaching a minimum for bulk GaAs. The maximum index change per photoexcited carrier increases by a factor of 3 as the well size decreases from bulk to 76 Å MQW.


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